Discrete Semiconductor Products

RJK1002DPP-A0#T2

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NCH POWER MOSFET 100V 70A 7.6MOHM TO-220F

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Discrete Semiconductor Products

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NCH POWER MOSFET 100V 70A 7.6MOHM TO-220F

Technical Specifications

Parameters and characteristics for this part

Specification	RJK1002DPP-A0#T2

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	94 nC
Input Capacitance (Ciss) (Max) @ Vds	6450 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	30 W
Rds On (Max) @ Id, Vgs	7.6 mOhm
Supplier Device Package	TO-220ABA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Power MOSFET 100V 70A 7.6mohm TO-220F

Part	Input Capacitance (Ciss) (Max) @ Vds	Technology	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Package / Case
Renesas Electronics Corporation RJK1002DPP-A0#T2	6450 pF	MOSFET (Metal Oxide)	N-Channel	7.6 mOhm	Through Hole	100 V	30 W	150 °C	TO-220ABA	10 V	70 A	94 nC	20 V	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 4.86

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources