Discrete Semiconductor Products

SCS320AHGC9

LTB

DIODE SIL CARB 650V 20A TO220ACP

Search across all available documentation for this part.

Discrete Semiconductor Products

LTB

DIODE SIL CARB 650V 20A TO220ACP

Technical Specifications

Parameters and characteristics for this part

Specification	SCS320AHGC9

Capacitance @ Vr, F	1000 pF
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-220ACP
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V

Part	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Reverse Recovery Time (trr)	Supplier Device Package	Technology	Speed	Package / Case
Rohm Semiconductor SCS320AHGC9	100 µA	175 ░C	1000 pF	650 V	Through Hole	0 ns	TO-220ACP	SiC (Silicon Carbide) Schottky	500 mA	TO-220-2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 20A Through Hole TO-220ACP

Technical documentation and resources

No documents available