Discrete Semiconductor Products

VS-40EPS08PBF

Obsolete

DIODE GP 800V 40A TO247AC

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE GP 800V 40A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	VS-40EPS08PBF

Current - Average Rectified (Io)	40 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-247-2
Speed [Min]	200 mA, 500 ns
Supplier Device Package	TO-247AC Modified, TO-247AC-2L
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.1 V

Part	Supplier Device Package	Current - Reverse Leakage @ Vr	Technology	Speed [Min]	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]
Vishay General Semiconductor - Diodes Division VS-40EPS08-M3	TO-247AC Modified TO-247AC-2L	100 µA	Standard	200 mA 500 ns	1 V	40 A	-40 °C	150 °C	800 V	TO-247-2	Through Hole
Vishay General Semiconductor - Diodes Division VS-40EPS08PBF	TO-247AC Modified TO-247AC-2L	100 µA	Standard	200 mA 500 ns		40 A	-40 °C	150 °C	800 V	TO-247-2	Through Hole	1.1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode 800 V 40A Through Hole TO-247AC Modified

Technical documentation and resources

No documents available