Discrete Semiconductor Products

SIR870ADP-T1-GE3

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POWER MOSFET, N CHANNEL, 100 V, 60 A, 0.0055 OHM, POWERPAK SO, SURFACE MOUNT

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Discrete Semiconductor Products

Active

POWER MOSFET, N CHANNEL, 100 V, 60 A, 0.0055 OHM, POWERPAK SO, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	SIR870ADP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	6.25 W, 104 W
Rds On (Max) @ Id, Vgs	6.6 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	FET Type	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology	Supplier Device Package	Vgs (Max)
Vishay General Semiconductor - Diodes Division SIR870ADP-T1-GE3	6.6 mOhm	100 V	80 nC	-55 °C	150 °C	3 V	PowerPAK® SO-8	4.5 V 10 V	6.25 W 104 W	N-Channel	Surface Mount	60 A	MOSFET (Metal Oxide)	PowerPAK® SO-8	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources