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Discrete Semiconductor Products
NXH008P120M3F1PTG
ActiveON Semiconductor
SILICON CARBIDE (SIC) MODULE – ELITESIC, 8 MOHM SIC M3S MOSFET, 1200 V, 2-PACK HALF BRIDGE TOPOLOGY, F1 PACKAGE
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Search across all available documentation for this part.
Discrete Semiconductor Products
NXH008P120M3F1PTG
ActiveON Semiconductor
SILICON CARBIDE (SIC) MODULE – ELITESIC, 8 MOHM SIC M3S MOSFET, 1200 V, 2-PACK HALF BRIDGE TOPOLOGY, F1 PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NXH008P120M3F1PTG |
|---|---|
| null | |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tray | 1 | $ 108.27 | |
| 10 | $ 87.50 | |||
| 25 | $ 82.20 | |||
| 80 | $ 81.71 | |||
| ON Semiconductor | N/A | 1 | $ 87.16 | |
Description
General part information
NXH008P120M3F1PTG Series
The NXH008P120M3F1PTG is a power module containing 8 mohm / 1200 V SiC MOSFET half−bridge and a thermistor with Alumina (AL2O3) DBC in an F1 package. The SiC MOSFET switches use M3S technology and are driven with 18V-20V gate drive.
Documents
Technical documentation and resources