TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Discrete Semiconductor Products

PN3566_D26Z

Obsolete

ON Semiconductor

TRANS NPN 30V 0.6A TO-92-3

Deep-Dive with AI

Search across all available documentation for this part.

Discrete Semiconductor Products

PN3566_D26Z

Obsolete

ON Semiconductor

TRANS NPN 30V 0.6A TO-92-3

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	PN3566_D26Z

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	150
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

PN356 Series

Part	Power - Max [Max]	Package / Case	Mounting Type	Vce Saturation (Max) @ Ib, Ic [Max]	Transistor Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Gain [Min]	Gain [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor PN3567	625 mW	TO-226-3 TO-92-3	Through Hole	250 mV	NPN	-55 °C	150 °C	600 mA	40 V	TO-92-3	50 nA
ON Semiconductor PN3563_D26Z	350 mW	TO-226-3 TO-92-3	Through Hole		NPN	-55 °C	150 °C	50 mA		TO-92-3		14 dB	26 dB	20 hFE	15 V	1.5 GHz
ON Semiconductor PN3568_J05Z	625 mW	TO-226-3 TO-92-3	Through Hole	250 mV	NPN	-55 °C	150 °C	1 A		TO-92-3	50 nA				60 V
ON Semiconductor PN3566_D26Z	625 mW	TO-226-3 TO-92-3	Through Hole		NPN			600 mA	30 V	TO-92-3	50 nA			150			1 V
ON Semiconductor PN3568_D26Z	625 mW	TO-226-3 TO-92-3	Through Hole	250 mV	NPN	-55 °C	150 °C	1 A		TO-92-3	50 nA				60 V
ON Semiconductor PN3569	625 mW	TO-226-3 TO-92-3	Through Hole	250 mV	NPN	-55 °C	150 °C	500 mA	40 V	TO-92-3	50 nA			100
ON Semiconductor PN3569_J05Z	625 mW	TO-226-3 TO-92-3	Through Hole	250 mV	NPN	-55 °C	150 °C	500 mA	40 V	TO-92-3	50 nA			100
ON Semiconductor PN3568_D75Z	625 mW	TO-226-3 TO-92-3	Through Hole	250 mV	NPN	-55 °C	150 °C	1 A		TO-92-3	50 nA				60 V
ON Semiconductor PN3569_D26Z	625 mW	TO-226-3 TO-92-3	Through Hole	250 mV	NPN	-55 °C	150 °C	500 mA	40 V	TO-92-3	50 nA			100
ON Semiconductor PN3563	350 mW	TO-226-3 TO-92-3	Through Hole		NPN	-55 °C	150 °C	50 mA		TO-92-3		14 dB	26 dB	20 hFE	15 V	1.5 GHz

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

PN356 Series

Bipolar (BJT) Transistor NPN 30 V 600 mA 625 mW Through Hole TO-92-3

Documents

Technical documentation and resources

No documents available