Discrete Semiconductor Products

RJK03C1DPB-00#J5

Obsolete

NCH SINGLE POWER MOSFET 30V 60A 2.2MOHM LFPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

NCH SINGLE POWER MOSFET 30V 60A 2.2MOHM LFPAK

Technical Specifications

Parameters and characteristics for this part

Specification	RJK03C1DPB-00#J5

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	42 nC
Input Capacitance (Ciss) (Max) @ Vds	6000 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-100, SOT-669
Power Dissipation (Max)	65 W
Rds On (Max) @ Id, Vgs	2.2 mOhm
Supplier Device Package	LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Single Power Mosfet 30V 60A 2.2Mohm Lfpak

Part	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Feature	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Vgs (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)
Renesas Electronics Corporation RJK03C1DPB-00#J5	4.5 V 10 V	LFPAK	Schottky Diode (Body)	N-Channel	MOSFET (Metal Oxide)	60 A	42 nC	65 W	6000 pF	150 °C	20 V	SC-100 SOT-669	2.2 mOhm	Surface Mount	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

The RJK03C1DPB is a Nch Single Power Mosfet 30V 60A 2.2Mohm Lfpak.

Technical documentation and resources