Discrete Semiconductor Products
EM6M2T2R
ActiveRohm Semiconductor
TRANS MOSFET N/P-CH SI 20V 0.2A 6-PIN EMT T/R
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Discrete Semiconductor Products
EM6M2T2R
ActiveRohm Semiconductor
TRANS MOSFET N/P-CH SI 20V 0.2A 6-PIN EMT T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | EM6M2T2R |
|---|---|
| Configuration | N and P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200 mA |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 25 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-563, SOT-666 |
| Rds On (Max) @ Id, Vgs | 1 Ohm |
| Supplier Device Package | EMT6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 20345 | $ 0.79 | |
Description
General part information
EM6M2 Series
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Documents
Technical documentation and resources