SIHA690N60E-GE3

Active

MOSFET N-CH 600V 4.3A TO220

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 600V 4.3A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	SIHA690N60E-GE3

Current - Continuous Drain (Id) @ 25°C	4.3 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	347 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	29 W
Rds On (Max) @ Id, Vgs	700 mOhm
Supplier Device Package	TO-220 Full Pack
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Mounting Type	Vgs (Max)	FET Type	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SIHA690N60E-GE3	Through Hole	30 V	N-Channel	700 mOhm	TO-220-3 Full Pack	TO-220 Full Pack	4.3 A	10 V	5 V	MOSFET (Metal Oxide)	-55 °C	150 °C	29 W	12 nC	347 pF	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 0.85

General part information

N-Channel 600 V 4.3A (Tc) 29W (Tc) Through Hole TO-220 Full Pack

Technical documentation and resources