Discrete Semiconductor Products

PJC7476_R1_00001

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100V P-CHANNEL ENHANCEMENT MODE

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Discrete Semiconductor Products

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100V P-CHANNEL ENHANCEMENT MODE

Technical Specifications

Parameters and characteristics for this part

Specification	PJC7476_R1_00001

Current - Continuous Drain (Id) @ 25°C	300 mA
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1.8 nC
Input Capacitance (Ciss) (Max) @ Vds	45 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max) [Max]	350 mW
Supplier Device Package	SOT-323
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
Panjit International Inc. PJC7476_R1_00001	4.5 V 10 V	300 mA	20 V	2.5 V	N-Channel	Surface Mount	100 V	MOSFET (Metal Oxide)	45 pF	350 mW	1.8 nC	SC-70 SOT-323	-55 °C	150 °C	SOT-323

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General part information

N-Channel 100 V 300mA (Ta) 350mW (Ta) Surface Mount SOT-323

Technical documentation and resources