Discrete Semiconductor Products

FJV4114RMTF

Obsolete

68@5MA,5V 1 PNP PRE-BIAS 200MW 100MA 50V SOT-23-3 DIGITAL TRANSISTORS ROHS

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Discrete Semiconductor Products

Obsolete

68@5MA,5V 1 PNP PRE-BIAS 200MW 100MA 50V SOT-23-3 DIGITAL TRANSISTORS ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	FJV4114RMTF

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	68
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	200 mW
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	SOT-23-3
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

PNP Epitaxial Silicon Transistor with Bias Resistor

Part	Mounting Type	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Package / Case	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Resistor - Base (R1)	Resistors Included	Resistor - Emitter Base (R2)
ON Semiconductor FJV4111RMTF	Surface Mount	100 mA	100	PNP - Pre-Biased	300 mV	200 mW	100 nA	SOT-23-3	SC-59 SOT-23-3 TO-236-3	200 MHz	40 V	22 kOhms	R1 Only
ON Semiconductor FJV4110RMTF	Surface Mount	100 mA	100	PNP - Pre-Biased	300 mV	200 mW	100 nA	SOT-23-3	SC-59 SOT-23-3 TO-236-3	200 MHz	40 V	10 kOhms
ON Semiconductor FJV4114RMTF	Surface Mount	100 mA	68	PNP - Pre-Biased	300 mV	200 mW	100 nA	SOT-23-3	SC-59 SOT-23-3 TO-236-3	200 MHz	50 V	4.7 kOhms		47000 Ohms

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.