Discrete Semiconductor Products

PSMN3R8-100BS,118

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MOSFET N-CH 100V 120A D2PAK

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Discrete Semiconductor Products

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MOSFET N-CH 100V 120A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN3R8-100BS,118

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	170 nC
Input Capacitance (Ciss) (Max) @ Vds	9900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	306 W
Rds On (Max) @ Id, Vgs	3.9 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C
Freescale Semiconductor - NXP PSMN3R8-100BS,118	N-Channel	100 V	20 V	MOSFET (Metal Oxide)	9900 pF	D2PAK	-55 °C	175 ░C	170 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	306 W	3.9 mOhm	Surface Mount	120 A

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General part information

N-Channel 100 V 120A (Tc) 306W (Tc) Surface Mount D2PAK

Technical documentation and resources