Technical Specifications
Parameters and characteristics for this part
| Specification | IPB60R070CFD7ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 31 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 2721 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 156 W |
| Rds On (Max) @ Id, Vgs | 70 mOhm |
| Supplier Device Package | PG-TO263-3-2 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPB60R070 Series
Infineon’s600V CoolMOS™ CFD7Superjunction MOSFET IPB60R070CFD7 in D2PAK package is ideally suited for resonant topologies in high powerSMPS, such asserver,telecomandEV chargingstations, where it enables significant efficiency improvements. As successor to theCFD2 SJ MOSFET familyit comes with reduced gate charge, improved turn-off behavior and up to 69% reduced reverse recovery charge compared to competitors.
Documents
Technical documentation and resources
