Discrete Semiconductor Products

SISA12ADN-T1-GE3

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MOSFET N-CH 30V 25A PPAK1212-8

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Discrete Semiconductor Products

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MOSFET N-CH 30V 25A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SISA12ADN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds	2070 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	28 W, 3.5 W
Rds On (Max) @ Id, Vgs	4.3 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	Supplier Device Package	Package / Case	Power Dissipation (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
Vishay General Semiconductor - Diodes Division SISA12ADN-T1-GE3	2070 pF	4.3 mOhm	MOSFET (Metal Oxide)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8	3.5 W 28 W	N-Channel	45 nC	25 A	2.2 V	-55 °C	150 °C	30 V	4.5 V 10 V	-16 V 20 V

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General part information

N-Channel 30 V 25A (Tc) 3.5W (Ta), 28W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources