Discrete Semiconductor Products

IRFS38N20DTRLP

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MOSFET, N-CH, 200V, 43A, TO-263 ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

MOSFET, N-CH, 200V, 43A, TO-263 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	IRFS38N20DTRLP

Current - Continuous Drain (Id) @ 25°C	43 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	91 nC
Input Capacitance (Ciss) (Max) @ Vds	2900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	3.8 W, 300 W
Rds On (Max) @ Id, Vgs	54 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Technology
INFINEON IRFS38N20DTRLP	54 mOhm	N-Channel	43 A	3.8 W 300 W	D2PAK	5 V	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2900 pF	175 °C	-55 °C	10 V	Surface Mount	91 nC	200 V	MOSFET (Metal Oxide)

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