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NXP Semiconductors-PMZB1200UPEYL MOSFETs Trans MOSFET P-CH 30V 0.41A 3-Pin DFN-B T/R
Circuit Protection

PESD5V0X2UMBYL

Active
Nexperia USA Inc.

ULTRA LOW CAPACITANCE UNIDIRECTIONAL DOUBLE ESD PROTECTION DIODE

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NXP Semiconductors-PMZB1200UPEYL MOSFETs Trans MOSFET P-CH 30V 0.41A 3-Pin DFN-B T/R
Circuit Protection

PESD5V0X2UMBYL

Active
Nexperia USA Inc.

ULTRA LOW CAPACITANCE UNIDIRECTIONAL DOUBLE ESD PROTECTION DIODE

Technical Specifications

Parameters and characteristics for this part

SpecificationPESD5V0X2UMBYL
Capacitance @ Frequency0.5 pF
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseSOT-883, SC-101
Power Line ProtectionFalse
QualificationAEC-Q101
Supplier Device PackageSOT-883
TypeZener
Unidirectional Channels2
Voltage - Breakdown (Min) [Min]7.5 V
Voltage - Clamping (Max) @ Ipp [Max]14 V
Voltage - Reverse Standoff (Typ)5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 19290$ 0.65

Description

General part information

PESD5V0X2UMB Series

Ultra low capacitance unidirectional double ElectroStatic Discharge (ESD) protection diode in a DFN1006B-3 (SOT883B) leadless ultra small Surface-Mounted Device (SMD) plastic package, designed to protect up to two signal lines from the damage caused by ESD and other transients.