Discrete Semiconductor Products

IRFB3006GPBF

NRND

MOSFET N-CH 60V 195A TO220AB

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Discrete Semiconductor Products

NRND

MOSFET N-CH 60V 195A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IRFB3006GPBF

Current - Continuous Drain (Id) @ 25°C	195 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	300 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	8970 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	375 W
Rds On (Max) @ Id, Vgs	2.5 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Current - Continuous Drain (Id) @ 25°C
INFINEON IRFB3006GPBF	375 W	60 V	20 V	TO-220AB	175 °C	-55 °C	MOSFET (Metal Oxide)	4 V	2.5 mOhm	TO-220-3	Through Hole	8970 pF	300 nC	10 V	N-Channel	195 A
INFINEON IRFB3006PBF	375 W	60 V	20 V	TO-220AB	175 °C	-55 °C	MOSFET (Metal Oxide)	4 V	2.5 mOhm	TO-220-3	Through Hole	8970 pF	300 nC	10 V	N-Channel	195 A

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