Discrete Semiconductor Products

PJX8603_R1_00001

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MOSFETS COMPLEMENTARY ENHANCEMENT MODE MOSFETESD PROTECTED

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Discrete Semiconductor Products

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MOSFETS COMPLEMENTARY ENHANCEMENT MODE MOSFETESD PROTECTED

Technical Specifications

Parameters and characteristics for this part

Specification	PJX8603_R1_00001

Configuration	N and P-Channel Complementary
Current - Continuous Drain (Id) @ 25°C	360 mA, 200 mA
Drain to Source Voltage (Vdss)	60 V, 50 V
Gate Charge (Qg) (Max) @ Vgs	1.1 nC, 0.95 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	51 pF
Input Capacitance (Ciss) (Max) @ Vds [Min]	36 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-563, SOT-666
Power - Max [Max]	300 mW
Rds On (Max) @ Id, Vgs	6 Ohm, 1.5 Ohm
Supplier Device Package	SOT-563
Technology	MOSFET (Metal Oxide)

Part	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Configuration	Drain to Source Voltage (Vdss)	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Panjit International Inc. PJX8603_R1_00001	1.5 Ohm 6 Ohm	Surface Mount	0.95 nC 1.1 nC	MOSFET (Metal Oxide)	200 mA 360 mA	SOT-563	N and P-Channel Complementary	50 V 60 V	300 mW	150 °C	-55 °C	SOT-563 SOT-666	36 pF	51 pF

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General part information

MOSFETS COMPLEMENTARY ENHANCEMENT MODE MOSFETESD PROTECTED

Technical documentation and resources