Discrete Semiconductor Products

NP100P04PLG-E1-AY

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TRANS MOSFET P-CH 40V 100A 3-PIN(2+TAB) TO-263 T/R

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Discrete Semiconductor Products

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TRANS MOSFET P-CH 40V 100A 3-PIN(2+TAB) TO-263 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	NP100P04PLG-E1-AY

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	320 nC
Input Capacitance (Ciss) (Max) @ Vds	15100 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	1.8 W, 200 W
Rds On (Max) @ Id, Vgs [Max]	3.7 mOhm
Supplier Device Package	TO-263
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Power Dissipation (Max)	Vgs(th) (Max) @ Id [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Mounting Type	FET Type	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case
Renesas Electronics Corporation NP100P04PLG-E1-AY	1.8 W 200 W	2.5 V	20 V	100 A	4.5 V 10 V	175 °C	Surface Mount	P-Channel	TO-263	MOSFET (Metal Oxide)	3.7 mOhm	320 nC	40 V	15100 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Super low on-state resistanceRDS(on)1 = 3.7 mO MAX. (VGS = -10 V, ID = -50 A)RDS(on)2 = 5.1 mO MAX. (VGS = -4.5 V, ID = -50 A)

RDS(on)1 = 3.7 mO MAX. (VGS = -10 V, ID = -50 A)

RDS(on)2 = 5.1 mO MAX. (VGS = -4.5 V, ID = -50 A)

Technical documentation and resources