Discrete Semiconductor Products

SI1467DH-T1-GE3

Active

MOSFET P-CH 20V 2.7A SC70-6

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET P-CH 20V 2.7A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SI1467DH-T1-GE3

Current - Continuous Drain (Id) @ 25°C	2.7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13.5 nC
Input Capacitance (Ciss) (Max) @ Vds	561 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power Dissipation (Max)	2.78 W, 1.5 W
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SI1467DH-T1-GE3	1.8 V 4.5 V	561 pF	Surface Mount	SC-70-6	90 mOhm	20 V	8 V	6-TSSOP SC-88 SOT-363	13.5 nC	P-Channel	1 V	1.5 W 2.78 W	2.7 A	MOSFET (Metal Oxide)	-55 °C	150 °C
Vishay General Semiconductor - Diodes Division SI1467DH-T1-BE3		561 pF	Surface Mount	SC-70-6	90 mOhm	20 V	8 V	6-TSSOP SC-88 SOT-363	13.5 nC	P-Channel	1 V	1.5 W 2.78 W	2.7 A	MOSFET (Metal Oxide)	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 2.7A (Tc) 1.5W (Ta), 2.78W (Tc) Surface Mount SC-70-6

Technical documentation and resources