Discrete Semiconductor Products

TSM1N80CW RPG

Obsolete

MOSFET N-CH 800V 300MA SOT223

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 800V 300MA SOT223

Technical Specifications

Parameters and characteristics for this part

Specification	TSM1N80CW RPG

Current - Continuous Drain (Id) @ 25°C	300 mA
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6 nC
Input Capacitance (Ciss) (Max) @ Vds	200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	2.1 W
Rds On (Max) @ Id, Vgs	21.6 Ohm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Power Dissipation (Max)	Supplier Device Package	Vgs (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs
Taiwan Semiconductor Corporation TSM1N80CW RPG	TO-261-4 TO-261AA	200 pF	Surface Mount	2.1 W	SOT-223	30 V	MOSFET (Metal Oxide)	10 V	800 V	21.6 Ohm	300 mA	N-Channel	150 °C	-55 °C	5 V	6 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.46

General part information

N-Channel 800 V 300mA (Ta) 2.1W (Tc) Surface Mount SOT-223

Technical documentation and resources

No documents available