
Discrete Semiconductor Products
MCNA650PD2200CB
ActiveLITTELFUSE
BIPOLAR MODULE - THYRISTOR COMPACK/ BOX
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Discrete Semiconductor Products
MCNA650PD2200CB
ActiveLITTELFUSE
BIPOLAR MODULE - THYRISTOR COMPACK/ BOX
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | MCNA650PD2200CB |
|---|---|
| Current - Gate Trigger (Igt) (Max) [Max] | 300 mA |
| Current - Hold (Ih) (Max) [Max] | 300 mA |
| Current - Non Rep. Surge 50, 60Hz (Itsm) | 16000 A, 17300 A |
| Current - On State (It (AV)) (Max) [Max] | 650 A |
| Current - On State (It (RMS)) (Max) [Max] | 1200 A |
| Mounting Type | Chassis Mount |
| Number of SCRs, Diodes | 1 Diode |
| Operating Temperature [Max] | 140 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | ComPack |
| Structure | Series Connection - SCR/Diode |
| Voltage - Gate Trigger (Vgt) (Max) [Max] [custom] | 2 V |
| Voltage - Off State | 2.2 kV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
MCNA650PD2200CB Series
The Thyristor-Diode Modules Portfolio offers various packages and breakdown voltages up to 2200V.
Documents
Technical documentation and resources