Discrete Semiconductor Products

PMV65XPER

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MOSFET P-CH 20V 2.8A TO236AB

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Discrete Semiconductor Products

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MOSFET P-CH 20V 2.8A TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	PMV65XPER

Current - Continuous Drain (Id) @ 25°C	2.8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	9 nC
Input Capacitance (Ciss) (Max) @ Vds	618 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	6.25 W, 480 mW
Rds On (Max) @ Id, Vgs	78 mOhm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.25 V

Part	Supplier Device Package	Vgs (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Grade	Qualification
Freescale Semiconductor - NXP PMV65UNER	TO-236AB	8 V	N-Channel	2.8 A	20 V	MOSFET (Metal Oxide)	6 nC	291 pF	Surface Mount	1.8 V 4.5 V	SC-59 SOT-23-3 TO-236-3	490 mW	-55 °C	150 °C	73 mOhm	1 V
Freescale Semiconductor - NXP PMV65XPER	TO-236AB	12 V	P-Channel	2.8 A	20 V	MOSFET (Metal Oxide)	9 nC	618 pF	Surface Mount	2.5 V 4.5 V	SC-59 SOT-23-3 TO-236-3	6.25 W 480 mW	-55 °C	150 °C	78 mOhm	1.25 V
Freescale Semiconductor - NXP PMV65ENEAR	TO-236AB	20 V	N-Channel	2.7 A	40 V	MOSFET (Metal Oxide)	6 nC	160 pF	Surface Mount	4.5 V 10 V	SC-59 SOT-23-3 TO-236-3	6.25 W 490 mW	-55 °C	150 °C	75 mOhm	2.5 V	Automotive	AEC-Q101

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General part information

P-Channel 20 V 2.8A (Ta) 480mW (Ta), 6.25W (Tc) Surface Mount TO-236AB

Technical documentation and resources