Discrete Semiconductor Products

SPP10N10L

Obsolete

MOSFET N-CH 100V 10.3A TO220-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 10.3A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPP10N10L

Current - Continuous Drain (Id) @ 25°C	10.3 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds	444 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	50 W
Rds On (Max) @ Id, Vgs	154 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Rds On (Max) @ Id, Vgs	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]
INFINEON SPP10N10	MOSFET (Metal Oxide)	426 pF	50 W	175 °C	-55 °C	20 V	Through Hole	100 V	19.4 nC	PG-TO220-3-1	170 mOhm	TO-220-3	N-Channel	10 V	10.3 A	4 V
INFINEON SPP10N10L	MOSFET (Metal Oxide)	444 pF	50 W	175 °C	-55 °C	20 V	Through Hole	100 V		PG-TO220-3-1	154 mOhm	TO-220-3	N-Channel	4.5 V 10 V	10.3 A	2 V	22 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.61

General part information

N-Channel 100 V 10.3A (Tc) 50W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources