Discrete Semiconductor Products
WNSC08650T6J
ObsoleteWeEn Semiconductors
DIODE SIL CARBIDE 650V 8A 5DFN
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Discrete Semiconductor Products
WNSC08650T6J
ObsoleteWeEn Semiconductors
DIODE SIL CARBIDE 650V 8A 5DFN
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | WNSC08650T6J |
|---|---|
| Capacitance @ Vr, F | 267 pF |
| Current - Average Rectified (Io) | 8 A |
| Current - Reverse Leakage @ Vr | 50 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Package / Case | 4-VSFN Exposed Pad |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | 500 mA |
| Supplier Device Package | 5-DFN (8x8) |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | |
Description
General part information
WNSC08650T6J
DIODE SIL CARBIDE 650V 8A 5DFN
Documents
Technical documentation and resources
No documents available