
Discrete Semiconductor Products
BSC350N20NSFDATMA1
ActiveINFINEON
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 200 V ; SUPERSO8 5X6 PACKAGE; 35 MOHM;
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Discrete Semiconductor Products
BSC350N20NSFDATMA1
ActiveINFINEON
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 200 V ; SUPERSO8 5X6 PACKAGE; 35 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BSC350N20NSFDATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 35 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2410 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 150 W |
| Supplier Device Package | PG-TDSON-8-1 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BSC350 Series
OptiMOS™ Fast Diode (FD) 200V, 250V and 300V is optimized for body diode hard commutation. These devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter.
Documents
Technical documentation and resources