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ONSEMI ISL9V3040P3
Discrete Semiconductor Products

NTPF450N80S3Z

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ON Semiconductor

<SUP></SUP>MOSFET – POWER, N-CHANNEL, SUPERFET<SUP>®</SUP> III, 800 V, 11 A, 450 MΩ, TO-220F

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ONSEMI ISL9V3040P3
Discrete Semiconductor Products

NTPF450N80S3Z

Active
ON Semiconductor

<SUP></SUP>MOSFET – POWER, N-CHANNEL, SUPERFET<SUP>®</SUP> III, 800 V, 11 A, 450 MΩ, TO-220F

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNTPF450N80S3Z
Current - Continuous Drain (Id) @ 25°C11 A
Drain to Source Voltage (Vdss)800 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]19.3 nC
Input Capacitance (Ciss) (Max) @ Vds885 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)29.5 W
Rds On (Max) @ Id, Vgs450 mOhm
Supplier Device PackageTO-220-3 Fullpack/TO-220F-3SG
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.85
10$ 1.87
50$ 1.66
100$ 1.37
500$ 1.37
1000$ 1.37
NewarkEach 1$ 2.96
10$ 2.77
25$ 2.65
50$ 2.51
100$ 2.28
250$ 2.24
500$ 2.23
ON SemiconductorN/A 1$ 1.26

Description

General part information

NTPF450N80S3Z Series

800 V SUPERFET III MOSFET is ON Semiconductor’s high performance MOSFET family offering 800 V breakdown voltage. New 800 V SUPERFET III MOSFET which is optimized for primary switch of flyback converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to its optimized design. In addition, internal Zener Diode significantlyimproves ESD capability. This new family of 800 V SUPERFET III MOSFET enables to make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as Laptop adapter, Audio, Lighting, ATX power and industrialpower supplies.