IGLD60R190D1SAUMA1
ObsoleteIGLD60R190D1S COOLGAN™ 600 V ENHANCEMENT MODE POWER TRANSISTOR WITH FAST TURN-ON AND TURN-OFF SPEED AND MINIMUM SWITCHING LOSSES
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IGLD60R190D1SAUMA1
ObsoleteIGLD60R190D1S COOLGAN™ 600 V ENHANCEMENT MODE POWER TRANSISTOR WITH FAST TURN-ON AND TURN-OFF SPEED AND MINIMUM SWITCHING LOSSES
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Technical Specifications
Parameters and characteristics for this part
| Specification | IGLD60R190D1SAUMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10 A |
| Drain to Source Voltage (Vdss) | 600 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 157 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-LDFN Exposed Pad |
| Power Dissipation (Max) [Max] | 62.5 W |
| Supplier Device Package | PG-LSON-8-1 |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | -10 V |
| Vgs(th) (Max) @ Id | 1.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
XGLD60R190 Series
The IGLD60R190D1S enables more compact topologies at higher efficiency and higher frequency operation. It is certified through an extensive GaN-specific qualification process, exceeding industry standards. Housed in the bottom-side cooled LSON-8 (DFN 8x8) package, it enables ideal power disspation as required in contemporary USB-Cadapters and chargers.
Documents
Technical documentation and resources