Discrete Semiconductor Products

VS-25F10

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DIODE GEN PURP 100V 25A DO203AA

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Discrete Semiconductor Products

Active

DIODE GEN PURP 100V 25A DO203AA

Technical Specifications

Parameters and characteristics for this part

Specification	VS-25F10

Current - Average Rectified (Io)	25 A
Current - Reverse Leakage @ Vr	12 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AA, Stud, DO-4
Speed [Min]	200 mA, 500 ns
Supplier Device Package	DO-4
Supplier Device Package	DO-203AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.3 V

Part	Package / Case	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Speed [Min]	Technology	Current - Reverse Leakage @ Vr
Vishay General Semiconductor - Diodes Division VS-25F10M	DO-203AA DO-4 Stud	Chassis Stud Mount	175 ░C	-65 C	DO-4	DO-203AA	1.3 V	25 A	100 V	200 mA 500 ns	Standard
Vishay General Semiconductor - Diodes Division VS-25F10	DO-203AA DO-4 Stud	Chassis Stud Mount	175 ░C	-65 C	DO-4	DO-203AA	1.3 V	25 A	100 V	200 mA 500 ns	Standard	12 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 100 V 25A Chassis, Stud Mount DO-203AA (DO-4)

Technical documentation and resources