Specification	TTC1949-Y,LF

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	200 mW
Supplier Device Package	S-Mini
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

TTC1949 Series

Bipolar Transistors, NPN Bipolar Transistor, 50 V, 0.5 A, SOT-346(S-Mini)

Part	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Power - Max [Max]	Package / Case	Mounting Type	Vce Saturation (Max) @ Ib, Ic
Toshiba Semiconductor and Storage TTC1949-GR,LF	500 mA	100 MHz	S-Mini	50 V	NPN	180	100 nA	150 °C	200 mW	SC-59 SOT-23-3 TO-236-3	Surface Mount	400 mV
Toshiba Semiconductor and Storage TTC1949-Y,LF	500 mA	100 MHz	S-Mini	50 V	NPN	120	100 nA	150 °C	200 mW	SC-59 SOT-23-3 TO-236-3	Surface Mount	400 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	4395	$ 0.25

General part information

Bipolar Transistors, NPN Bipolar Transistor, 50 V, 0.5 A, SOT-346(S-Mini)

Technical documentation and resources