Discrete Semiconductor Products

MSJB17N80-TP

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N-CHANNEL MOSFET, D2-PAK

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Discrete Semiconductor Products

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N-CHANNEL MOSFET, D2-PAK

Technical Specifications

Parameters and characteristics for this part

Specification	MSJB17N80-TP

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1830 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max) [Max]	181 W
Rds On (Max) @ Id, Vgs	290 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max) [Max]	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)
MCC (Micro Commercial Components) MSJB17N80-TP	1830 pF	D2PAK	30 V	17 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	56 nC	4 V	150 °C	-55 °C	181 W	N-Channel	MOSFET (Metal Oxide)	10 V	290 mOhm	Surface Mount	800 V
MCC (Micro Commercial Components) MSJB17N80-TP	1830 pF	D2PAK	30 V	17 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	56 nC	4 V	150 °C	-55 °C	181 W	N-Channel	MOSFET (Metal Oxide)	10 V	290 mOhm	Surface Mount	800 V

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General part information

N-Channel 800 V 17A (Tc) 181W Surface Mount D2PAK

Technical documentation and resources