Discrete Semiconductor Products

IPP039N10N5AKSA1

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OPTIMOS™ 5 N-CHANNEL POWER MOSFET 100 V ; TO-220 PACKAGE; 3.9 MOHM;

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Discrete Semiconductor Products

Unknown

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 100 V ; TO-220 PACKAGE; 3.9 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IPP039N10N5AKSA1

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	95 nC
Input Capacitance (Ciss) (Max) @ Vds	7000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	188 W
Rds On (Max) @ Id, Vgs	3.9 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.8 V

Part	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Technology	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
INFINEON IPP039N10N5AKSA1	TO-220-3	175 °C	-55 °C	N-Channel	PG-TO220-3-1	Through Hole	95 nC	100 A	20 V	3.9 mOhm	7000 pF	100 V	6 V 10 V	3.8 V	MOSFET (Metal Oxide)	188 W
INFINEON IPP039N04LGXKSA1	TO-220-3	175 °C	-55 °C	N-Channel	PG-TO220-3-1	Through Hole			20 V	3.9 mOhm	6100 pF	40 V	4.5 V 10 V	2 V	MOSFET (Metal Oxide)	94 W	78 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

OptiMOS™ 5 100V power MOSFETin a TO-220 package ideal for high frequency switching and synchronous rectification applications.

Technical documentation and resources