Discrete Semiconductor Products

IMW65R048M1HXKSA1

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INFINEON

COOLSIC™ MOSFET 650V – SIC MOSFET DELIVERING RELIABLE AND COST-EFFECTIVE PERFORMANCE IN TO247 3–PIN PACKAGE

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DocumentsDatasheet Technical Data Sheet EN

Discrete Semiconductor Products

IMW65R048M1HXKSA1

Active

INFINEON

COOLSIC™ MOSFET 650V – SIC MOSFET DELIVERING RELIABLE AND COST-EFFECTIVE PERFORMANCE IN TO247 3–PIN PACKAGE

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IMW65R048M1HXKSA1

Current - Continuous Drain (Id) @ 25°C	39 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	33 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1118 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	64 mOhm
Supplier Device Package	PG-TO247-3-41
Vgs (Max) [Max]	23 V
Vgs (Max) [Min]	-5 V
Vgs(th) (Max) @ Id	5.7 V

IMW65R048 Series

Part	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max) [Min]	Vgs (Max) [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)
INFINEON IMW65R048M1HXKSA1	5.7 V	N-Channel	Through Hole	125 W	150 °C	-55 °C	-5 V	23 V	64 mOhm	39 A	1118 pF	PG-TO247-3-41	18 V	TO-247-3	33 nC	650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	736	$ 8.94
	Tube	1	$ 8.00
		30	$ 5.40
Newark	Each	1	$ 10.33
		1	$ 10.33
		10	$ 10.19
		10	$ 10.19
		25	$ 7.99
		25	$ 7.99
		50	$ 7.73
		50	$ 7.73
		100	$ 7.46
		100	$ 7.46
		480	$ 7.42
		480	$ 7.42
		720	$ 7.19
		720	$ 7.19

Description

General part information

IMW65R048 Series

CoolSiC™ MOSFETtechnology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMW65R048M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both thelowest losses in the applicationand thehighest reliability in operation.This SiC MOSFET comes in a TO247 3-pin package with a cost-effective performance.