Discrete Semiconductor Products

PN4391 TIN/LEAD

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JFETS N-CH 40VGD 40VGS 50MA 625MW

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Discrete Semiconductor Products

Active

JFETS N-CH 40VGD 40VGS 50MA 625MW

Technical Specifications

Parameters and characteristics for this part

Specification	PN4391 TIN/LEAD

Current - Drain (Idss) @ Vds (Vgs=0)	50 mA
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	14 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Power - Max [Max]	625 mW
Resistance - RDS(On)	30 Ohms
Supplier Device Package	TO-92-3
Voltage - Breakdown (V(BR)GSS)	40 V
Voltage - Cutoff (VGS off) @ Id	4 V

Part	Package / Case	Package / Case	Resistance - RDS(On)	Mounting Type	Voltage - Cutoff (VGS off) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Voltage - Breakdown (V(BR)GSS)	Current - Drain (Idss) @ Vds (Vgs=0)	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Supplier Device Package
Central Semiconductor Corp PN4391 TRE	TO-226AA	TO-226-3 TO-92-3	30 Ohms	Through Hole	4 V	14 pF	625 mW	40 V	50 mA	150 °C	-65 °C	N-Channel	TO-92-3
Central Semiconductor Corp PN4391 TIN/LEAD	TO-226AA	TO-226-3 TO-92-3	30 Ohms	Through Hole	4 V	14 pF	625 mW	40 V	50 mA	150 °C	-65 °C	N-Channel	TO-92-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 3.88
Mouser	N/A	2500	$ 3.65

General part information

JFETS N-CH 40VGD 40VGS 50MA 625MW

Technical documentation and resources