Discrete Semiconductor Products
R6055VNZC17
ActiveRohm Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 600V, 0.08OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-3PF, 3 PIN
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Discrete Semiconductor Products
R6055VNZC17
ActiveRohm Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 600V, 0.08OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-3PF, 3 PIN
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Technical Specifications
Parameters and characteristics for this part
| Specification | R6055VNZC17 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 23 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3700 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-3P-3 Full Pack |
| Power Dissipation (Max) | 99 W |
| Rds On (Max) @ Id, Vgs [Max] | 71 mOhm |
| Supplier Device Package | TO-3PF |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 6.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
R6055VNZ Series
R6055VNZ is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.
Documents
Technical documentation and resources