Discrete Semiconductor Products

SQ2360EES-T1-GE3

Obsolete

MOSFET N-CH 60V 4.4A TO236

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 4.4A TO236

Technical Specifications

Parameters and characteristics for this part

Specification	SQ2360EES-T1-GE3

Current - Continuous Drain (Id) (Tc)	4.4 A
Drain to Source Voltage (Vdss)	60 V
FET Type	N-Channel
Gate Charge (Max)	12 nC
Input Capacitance (Ciss) (Max)	370 pF
Mounting Type	Surface Mount
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23-3 (TO-236)
Rds On (Max)	85 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.5 V

Part	Technology	Package Name	Rds On (Max)	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Package / Case	Gate Charge (Max)	Mounting Type
Vishay Dale SQ2360EES-T1-GE3	MOSFET (Metal Oxide)	SOT-23-3 (TO-236)	85 mOhm	N-Channel	60 V	370 pF	2.5 V	4.4 A	SC-59 SOT-23-3 TO-236-3	12 nC	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

3D models and CAD resources for this part

General part information

N-Channel 60 V 4.4A (Tc) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources