Discrete Semiconductor Products

SI7123DN-T1-GE3

Obsolete

MOSFET P-CH 20V 10.2A PPAK1212-8

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 10.2A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7123DN-T1-GE3

Current - Continuous Drain (Id) (Ta)	10.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	90 nC, 90 nC
Input Capacitance (Ciss) (Max)	3729 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	1.5 W
Rds On (Max)	10.6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

Part	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Package Name	FET Type	Vgs (Max)	Power Dissipation (Max)	Package / Case	Rds On (Max)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Ta)	Gate Charge (Max)	Mounting Type	Technology
Vishay Dale SI7123DN-T1-GE3	4.5 V	1.8 V	1 V	-55 °C	150 °C	20 V	PowerPAK® 1212-8	P-Channel	8 V	1.5 W	PowerPAK® 1212-8	10.6 mOhm	3729 pF	10.2 A	90 nC 90 nC	Surface Mount	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	2600	$ 1.49	30d+

3D models and CAD resources for this part

General part information

P-Channel 20 V 10.2A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Technical documentation and resources