Technical Specifications
Parameters and characteristics for this part
| Specification | IDH20G120C5XKSA1 |
|---|---|
| Capacitance @ Vr, F | 1050 pF |
| Current - Average Rectified (Io) | 56 A |
| Current - Reverse Leakage @ Vr | 123 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | TO-220-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | 500 mA |
| Supplier Device Package | PG-TO220-2-1 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 757 | $ 7.58 | |
| Tube | 1 | $ 9.40 | ||
| 50 | $ 7.51 | |||
| 100 | $ 6.72 | |||
| 500 | $ 5.93 | |||
| 1000 | $ 5.33 | |||
| 2000 | $ 5.00 | |||
Description
General part information
IDH20G120 Series
CoolSiC™ Schottky diode1200 V, 20 A generation 5 in a TO-220 real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Documents
Technical documentation and resources