Specification	XPQR3004PB,LXHQ

Current - Continuous Drain (Id) @ 25°C	400 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	295 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	26910 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerBSFN
Power Dissipation (Max)	750 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	0.3 mOhm
Supplier Device Package	L-TOGL™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

XPQR3004PB Series

12V - 300V MOSFETs, N-ch MOSFET, 40 V, 400 A, 0.00030 Ω@10V, L-TOGL

Part	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Grade	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type	Operating Temperature	Technology	Drain to Source Voltage (Vdss)	Package / Case	Vgs (Max)	Qualification
Toshiba Semiconductor and Storage XPQR3004PB,LXHQ	6 V 10 V	295 nC	N-Channel	400 A	750 W	0.3 mOhm	Automotive	26910 pF	3 V	L-TOGL™	Surface Mount	175 °C	MOSFET (Metal Oxide)	40 V	8-PowerBSFN	20 V	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2790	$ 6.97

General part information

12V - 300V MOSFETs, N-ch MOSFET, 40 V, 400 A, 0.00030 Ω@10V, L-TOGL

Technical documentation and resources