Discrete Semiconductor Products

SIA467EDJ-T1-GE3

Obsolete

MOSFET P-CH 12V 31A PPAK SC70-6

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 12V 31A PPAK SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA467EDJ-T1-GE3

Current - Continuous Drain (Id) (Tc)	31 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	72 nC, 72 nC
Input Capacitance (Ciss) (Max)	2520 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-50 °C
Package / Case	PowerPAK® SC-70-6
Package Name	PowerPAK® SC-70-6 Single
Power Dissipation (Max)	3.5 W, 19 W
Rds On (Max)	13 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

Part	Package / Case	Power Dissipation (Max)	Technology	Mounting Type	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	FET Type	Gate Charge (Max)	Package Name	Vgs (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)
Vishay Dale SIA467EDJ-T1-GE3	PowerPAK® SC-70-6	3.5 W 19 W	MOSFET (Metal Oxide)	Surface Mount	2520 pF	12 V	1 V	31 A	13 mOhm	P-Channel	72 nC 72 nC	PowerPAK® SC-70-6 Single	8 V	4.5 V	1.8 V	-50 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

P-Channel 12 V 31A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

Technical documentation and resources