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Beta
TTA004B - Bipolar Transistors, PNP Bipolar Transistor, -160 V, -1.5 A, TO-126N
Discrete Semiconductor Products

TTA004B,Q

Active
Toshiba Semiconductor and Storage

BIPOLAR TRANSISTORS, PNP BIPOLAR TRANSISTOR, -160 V, -1.5 A, TO-126N

TTA004B - Bipolar Transistors, PNP Bipolar Transistor, -160 V, -1.5 A, TO-126N
Discrete Semiconductor Products

TTA004B,Q

Active
Toshiba Semiconductor and Storage

BIPOLAR TRANSISTORS, PNP BIPOLAR TRANSISTOR, -160 V, -1.5 A, TO-126N

Technical Specifications

Parameters and characteristics for this part

SpecificationTTA004B,Q
Current - Collector (Ic) (Max) [Max]1.5 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]140
Frequency - Transition100 MHz
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-225AA, TO-126-3
Power - Max [Max]10 W
Supplier Device PackageTO-126N
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max)160 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 2446$ 0.81

Description

General part information

TTA004B Series

Bipolar Transistors, PNP Bipolar Transistor, -160 V, -1.5 A, TO-126N