Discrete Semiconductor Products

MCP75N10Y-BP

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N-CHANNEL MOSFET,TO-220AB(H)

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Discrete Semiconductor Products

Active

N-CHANNEL MOSFET,TO-220AB(H)

Technical Specifications

Parameters and characteristics for this part

Specification	MCP75N10Y-BP

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Input Capacitance (Ciss) (Max) @ Vds	2429 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	205 W
Rds On (Max) @ Id, Vgs	8.6 mOhm
Supplier Device Package	TO-220AB (H)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]
Micro Commercial Components MCP75N10Y-BP	-55 °C	150 °C	N-Channel	8.6 mOhm	100 V	TO-220-3	75 A	TO-220AB (H)	Through Hole	20 V	6 V 10 V	MOSFET (Metal Oxide)	2429 pF	32 nC	4 V	205 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 75A 205W Through Hole TO-220AB (H)

Technical documentation and resources