Specification	CTS521,L3F

Capacitance @ Vr, F	25 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	30 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Package / Case	SOD-882
Speed	200 mA
Speed	Any Speed
Supplier Device Package	CST2
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If [Max]	500 mV

CTS521 Series

Diodes, 30 V/0.2 A Schottky Barrier Diode, SOD-882(CST2)

Part	Speed	Speed	Voltage - Forward (Vf) (Max) @ If [Max]	Mounting Type	Current - Reverse Leakage @ Vr	Supplier Device Package	Operating Temperature - Junction [Max]	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Technology	Capacitance @ Vr, F
Toshiba Semiconductor and Storage CTS521,L3F	200 mA	Any Speed	500 mV	Surface Mount	30 µA	CST2	125 °C	SOD-882	30 V	200 mA	Schottky	25 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	128990	$ 0.12

General part information

Diodes, 30 V/0.2 A Schottky Barrier Diode, SOD-882(CST2)

Technical documentation and resources