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TO-220AB PKG
Discrete Semiconductor Products

IRFB7440PBF

Active
INFINEON

MOSFET TRANSISTOR, N CHANNEL, 120 A, 40 V, 0.002 OHM, 10 V, 3 V ROHS COMPLIANT: YES

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TO-220AB PKG
Discrete Semiconductor Products

IRFB7440PBF

Active
INFINEON

MOSFET TRANSISTOR, N CHANNEL, 120 A, 40 V, 0.002 OHM, 10 V, 3 V ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFB7440PBF
Current - Continuous Drain (Id) @ 25°C120 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 6 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]135 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]4730 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C, 155 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)143 W
Rds On (Max) @ Id, Vgs2.5 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 188$ 1.20
Tube 1$ 2.10
10$ 1.34
100$ 0.91
500$ 0.72
1000$ 0.67
2000$ 0.61
5000$ 0.58
MouserN/A 1$ 1.52
10$ 1.11
25$ 0.83
100$ 0.70
250$ 0.70
500$ 0.62
1000$ 0.52
5000$ 0.49
NewarkEach 1$ 1.81
10$ 1.03
100$ 0.95
500$ 0.89
1000$ 0.82
3000$ 0.81
10000$ 0.80

Description

General part information

IRFB7440 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.