Discrete Semiconductor Products

PNE20030EP-QX

Active

200 V, 3 A HYPERFAST RECOVERY RECTIFIER

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsPNE20030EP-QX | Datasheet plastic, surface mounted package; 2 terminals; 4 mm pitch; 3.8 mm x 2.6 mm x 1 mm body +11

Discrete Semiconductor Products

PNE20030EP-QX

Active

Nexperia USA Inc.

200 V, 3 A HYPERFAST RECOVERY RECTIFIER

Deep-Dive with AI

DocumentsPNE20030EP-QX | Datasheet plastic, surface mounted package; 2 terminals; 4 mm pitch; 3.8 mm x 2.6 mm x 1 mm body +11

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	PNE20030EP-QX

Capacitance @ Vr, F	32 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	1 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction	175 °C
Package / Case	SOD-128
Qualification	AEC-Q101
Reverse Recovery Time (trr)	30 ns
Speed	500 ns, 200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If [Max]	980 mV

PNE20030EP-Q Series

200 V, 3 A hyperfast recovery rectifier

Part	Current - Average Rectified (Io)	Package / Case	Capacitance @ Vr, F	Technology	Speed	Qualification	Operating Temperature - Junction	Voltage - DC Reverse (Vr) (Max) [Max]	Grade	Voltage - Forward (Vf) (Max) @ If [Max]	Mounting Type	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)
Nexperia USA Inc. PNE20030EP-QX	3 A	SOD-128	32 pF	Standard	200 mA 500 ns	AEC-Q101	175 °C	200 V	Automotive	980 mV	Surface Mount	1 µA	30 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2358	$ 0.77

Description

General part information

PNE20030EP-Q Series

High power density, hyperfast recovery rectifier with high-efficiency planar technology, encapsulated in a small and flat lead CFP5 (SOD128) Surface-Mounted Device (SMD) plastic package.