Specification	PSMNR90-80CSFJ

Current - Continuous Drain (Id) @ 25°C	505 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	463 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	32115 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	Exposed Pad, 12-BESOP
Package / Case [x]	9.4 mm
Package / Case [x]	0.37 in
Power Dissipation (Max)	1.55 kW
Rds On (Max) @ Id, Vgs	0.9 mOhm
Supplier Device Package	CCPAK1212i
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

PSMNR90-80CSF Series

NextPower 80 V, 0.9 mOhm, N-channel MOSFET in CCPAK1212i package

Part	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Package / Case	Package / Case [x]	Package / Case [x]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	FET Type	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology
Nexperia USA Inc. PSMNR90-80CSFJ	0.9 mOhm	1.55 kW	80 V	175 °C	-55 °C	20 V	12-BESOP Exposed Pad	9.4 mm	0.37 in	10 V	505 A	N-Channel	463 nC	Surface Mount	CCPAK1212i	32115 pF	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1021	$ 13.94

General part information

NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications.

Technical documentation and resources