Discrete Semiconductor Products

IPA60R099C6XKSA1

Obsolete

MOSFET N-CH 600V 37.9A TO220-FP

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 600V 37.9A TO220-FP

Technical Specifications

Parameters and characteristics for this part

Specification	IPA60R099C6XKSA1

Current - Continuous Drain (Id) @ 25°C	37.9 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	119 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2660 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	35 W
Rds On (Max) @ Id, Vgs	99 mOhm
Supplier Device Package	PG-TO220-FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
INFINEON IPA60R099C6XKSA1	PG-TO220-FP	2660 pF	119 nC	150 °C	-55 °C	35 W	20 V	10 V	Through Hole	37.9 A	MOSFET (Metal Oxide)	600 V	TO-220-3 Full Pack	N-Channel	99 mOhm	3.5 V
INFINEON IPA60R099P7XKSA1	PG-TO220-FP			150 °C	-55 °C	29 W	20 V	10 V	Through Hole	31 A	MOSFET (Metal Oxide)	600 V	TO-220-3 Full Pack	N-Channel	99 mOhm	4 V	1952 pF	45 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 4.32

General part information

N-Channel 600 V 37.9A (Tc) 35W (Tc) Through Hole PG-TO220-FP

Technical documentation and resources