Discrete Semiconductor Products

GIB1401HE3_A/I

Obsolete

DIODE GEN PURP 50V 8A TO263AB

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 50V 8A TO263AB

Technical Specifications

Parameters and characteristics for this part

Specification	GIB1401HE3_A/I

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Qualification	AEC-Q101
Reverse Recovery Time (trr)	35 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-263AB (D2PAK)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If [Max]	975 mV

Part	Mounting Type	Current - Reverse Leakage @ Vr	Supplier Device Package	Qualification	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Grade	Technology	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If [Max]
Vishay General Semiconductor - Diodes Division GIB1401HE3_A/I	Surface Mount	5 µA	TO-263AB (D2PAK)	AEC-Q101	200 mA 500 ns	50 V	8 A	150 °C	-65 C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Automotive	Standard	35 ns	975 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.71

General part information

Diode 50 V 8A Surface Mount TO-263AB (D2PAK)

Technical documentation and resources