TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Discrete Semiconductor Products

IPB065N10N3GATMA1

Obsolete

INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 100 V ; D2PAK TO-263 PACKAGE; 6.5 MOHM;

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Discrete Semiconductor Products

IPB065N10N3GATMA1

Obsolete

INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 100 V ; D2PAK TO-263 PACKAGE; 6.5 MOHM;

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPB065N10N3GATMA1

Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	64 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4910 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	6.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPB065 Series

Part	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]
INFINEON IPB065N10N3GATMA1	MOSFET (Metal Oxide)	6.5 mOhm	4910 pF	6 V 10 V	N-Channel	150 W	64 nC	20 V	Surface Mount	100 V	3.5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	175 °C	-55 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

Description

General part information

IPB065 Series

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on)and FOM (figure of merit).

Documents

Technical documentation and resources