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MULTICOMP PRO MUR1660CT
Discrete Semiconductor Products

IRFB7730PBF

Active
INFINEON

POWER MOSFET, HEXFET, N CHANNEL, 75 V, 195 A, 0.0026 OHM, TO-220AB, THROUGH HOLE

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MULTICOMP PRO MUR1660CT
Discrete Semiconductor Products

IRFB7730PBF

Active
INFINEON

POWER MOSFET, HEXFET, N CHANNEL, 75 V, 195 A, 0.0026 OHM, TO-220AB, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFB7730PBF
Current - Continuous Drain (Id) @ 25°C195 A
Drain to Source Voltage (Vdss)75 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 6 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]407 nC
Input Capacitance (Ciss) (Max) @ Vds13660 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)375 W
Rds On (Max) @ Id, Vgs2.6 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 4116$ 2.77
Tube 1$ 3.08
10$ 2.03
100$ 1.52

Description

General part information

IRFB7730 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.